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학술지 Nonvolatile Memory Transistors Using Solution-Processed Zinc-Tin Oxide and Ferroelectric Poly(Vinylidene Fluoride-Trifluoroethylene)
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저자
윤성민, 정순원, 양신혁, 변춘원, 황치선, 박상희, Hiroshi Ishiwara
발행일
201011
출처
Organic Electronics, v.11 no.11, pp.1746-1752
ISSN
1566-1199
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.orgel.2010.08.002
협약과제
10MB3700, 고품위 Plastic AMOLED 원천기술 개발, 유병곤
초록
The nonvolatile memory thin-film transistor (MTFT) using a solution-processed zinc-tin oxide (ZTO) semiconducting channel and a poly(vinylidene fluoride-trifluoroethylene) ferroelectric gate insulator was proposed. The crystalline phases of spin-coated ZTO films were essentially amorphous even when the films were annealed at 500 °C and the surface morphology was very smooth and uniform. Although the memory behaviors based on the ferroelectric field-effect were confirmed for all the fabricated MTFTs, the field-effect mobility, memory window, and the on/off ratio were markedly varied with the changes in annealing temperature and film composition of the ZTO channel. The origins for these differences were examined from the changes in electrical conductivities during the thermal process. The best device performances could be obtained for the MTFT using the 50/50 mol% ZTO channel annealed at 500 °C. The memory window at VG sweep of 짹15V, field-effect mobility, subthreshold swing, and on/off ratio were obtained to be approximately 8.1V,15.8cm2V-1s-1,1.1V/dec, and 6.4×107, respectively. © 2010 Elsevier B.V. All rights reserved.
키워드
Nonvolatile memory transistor, Oxide semiconductor, P(VDF-TrFE), Solution process, Zn-Sn-O
KSP 제안 키워드
Annealing temperature, Electrical conductivity(EC), Ferroelectric gate, Film composition, First Stokes(S1), Gate insulator, Non-Volatile Memory(NVM), Oxide semiconductor, Solution-processed, Spin-coated, Thermal process