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학술지 Fully Transparent Non-volatile Memory Thin-Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200°C
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저자
윤성민, 양신혁, 변춘원, 박상희, 조두희, 정순원, 권오상, 황치선
발행일
201003
출처
Advanced Functional Materials, v.20 no.6, pp.921-926
ISSN
1616-301X
출판사
John Wiley & Sons
DOI
https://dx.doi.org/10.1002/adfm.200902095
협약과제
09MB2900, 투명전자 소자를 이용한 스마트 창, 조경익
초록
A fully transparent non-volatile memory thin-film transistor (T-MTFT) is demonstrated. The gate stack is composed of organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and oxide semiconducting Al-Zn-Sn-O (AZTO) layers, in which thin Al2O 3 is introduced between two layers. All the fabrication processes are performed below 200°C on the glass substrate. The transmittance of the fabricated device was more than 90% at the wavelength of 550 nm. The memory window obtained in the T-MTFT was 7.5 V with a gate voltage sweep of-10 to 10 V, and it was still 1.8V even with a lower voltage sweep of -6 to 6 V. The field-effect mobility, subthreshold swing, on/off ratio, and gate leakage currents were obtained to be 32.2 cm2 V-1 s -1,0.45 Vdecade-1,108, and 10-13 A, respectively. All these characteristics correspond to the best performances among all types of nonvolatile memory transistors reported so far, although the programming speed and retention time should be more improved. ©2010 WILEY-VCH Verlag GmbH & Co. KGaA.
KSP 제안 키워드
AND gate, Al-Zn, Co. KGaA, Gate leakage, Gate stack, Glass substrate, Leakage current, Non-Volatile Memory(NVM), O 3, Oxide semiconductor, Thin-Film Transistor(TFT)