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학술지 A Low-Temperature-Grown TiO2-Based Device for the Flexible Stacked RRAM Application
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저자
정후영, Yong In Kim, 이정용, 최성율
발행일
201002
출처
Nanotechnology, v.21 no.11, pp.1-6
ISSN
0957-4484
출판사
Institute of Physics (IOP)
DOI
https://dx.doi.org/10.1088/0957-4484/21/11/115203
협약과제
08IB2300, 고신뢰성 charge complex 소재 탐색, 최성율
초록
Flexible TiO2 crossbar memory device arrays were fabricated on plastic substrates using amorphous titanium oxide thin films grown by the low-temperature plasma-enhanced atomic layer deposition method. Al/ TiO 2 /Al memory cells on polyethersulfone(PES) showed an enhanced endurance property (up to 104cycles) and low switching voltages compared to the cells on rigid substrates. The multi-stacked memory arrays were constructed by forming the additional Al/ TiO2 /Al layer on the first memory device layer. Memory cells on each layer exhibited stable switching characteristics and mechanical robustness without interlayer cell-to-cell interference. © 2010 IOP Publishing Ltd.
KSP 제안 키워드
Al layer, Amorphous titanium oxide, Atomic layer deposition method, Crossbar memory, Device arrays, Endurance property, Low temperature(LT), Memory Array, Oxide thin films, Plastic substrate, Stable switching