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학술지 Voltage-induced Current-Jump Assisted by Infrared or Temperature in p-Type GaAs
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저자
최성열, 김봉준, 최정용, 김현탁, 이용욱, 서기완
발행일
201012
출처
한국물리학회, v.57 no.61, pp.1769-1772
ISSN
0374-4884
출판사
한국물리학회
DOI
https://dx.doi.org/10.3938/jkps.57.1769
협약과제
10MB2700, 전기적 점프(Current Jump)를 이용한 신소자 기술, 김현탁
초록
Epitaxial Be-doped GaAs thin films with hole concentrations of 3.0 × 1016 cm-3 and 5.0 × 1016 cm-3 were deposited on GaAs (001) substrates by solid-source molecular beam epitaxy. An energy gap of GaAs of 1.3 eV was observed by photoluminance. Devices fabricated by the thin films showed abrupt current-jumps and an Ohmic behavior indicating a metal-insulator transition after the jump. The current-jump voltage decreases as the temperature or the infrared intensity increases, which indicates that the devices can be used as a programmable critical temperature sensors.
키워드
GaAs, Metal-insulator transition
KSP 제안 키워드
Critical temperature, Energy gap, Gaas thin films, Infrared intensity, Molecular beam epitaxy(MBE), Ohmic behavior, Solid-source molecular beam epitaxy, induced current, metal-insulator transition, p-Type, temperature sensor(LM35)