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학술지 A New Method of Measuring Localized Chromatic Dispersion of Structured Nanowaveguide Devices Using White-Light Interferometry
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저자
김동욱, 김승환, 이성헌, 김경헌, 이종무, 이일항
발행일
201201
출처
IEEE/OSA Journal of Lightwave Technology, v.30 no.1, pp.43-48
ISSN
0733-8724
출판사
IEEE, OSA
DOI
https://dx.doi.org/10.1109/JLT.2011.2177638
협약과제
11MB5800, 6"급 에피웨이퍼 기반 수직형 LED 칩용 Laser Lift-off 장비 개발, 이종무
초록
We report on a simple and direct method of measuring localized chromatic dispersion (CD) profiles of structured nanowaveguide devices using white-light interferometry. Phase change in the interference fringe of a white-light interferometer (WLI) caused by introducing a sample-under-test into one of the interferometer arms was used to determine a spectral profile of its accurate CD coefficients. This method was tested by measuring the spectral CD profiles of a localized silicon nanowaveguide and of a nonmembrane-type photonic crystal waveguide (PhCW) excluding their optical coupling sections. The measured local CD values of a 500-nm-wide single-line-defect (W1) PhCW with a lattice period of 460 nm and the hole radius of 165 nm formed on 220-nm-thick silicon layer of a silicon-on-insulator (SOI) wafer varied from 0.38 to 0.22 ps/(nm쨌cm) for a wavelength range from 1530 to 1570 nm. This method will be very useful in determining the accurate CD profiles of nanophotonic waveguide devices. © 2006 IEEE.
키워드
Chromatic dispersion (CD), interferometry, photonic waveguides
KSP 제안 키워드
460 nm, 65 nm, Chromatic dispersion(CD), Interference fringe, Optical coupling, Phase change, Photonic crystal waveguides, Silicon On Insulator(SOI), Silicon layer, Simple and direct, Thick silicon