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학술지 High Output Power and High Fundamental Leakage Suppression Frequency Doubler MMIC for E-Band Transceiver
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저자
장동필, 염인복
발행일
201412
출처
Journal of Electromagnetic Engineering and Science, v.14 no.4, pp.342-345
ISSN
2234-8409
출판사
한국전자파학회 (KIEES)
DOI
https://dx.doi.org/10.5515/JKIEES.2014.14.4.342
초록
An active frequency doubler monolithic microwave integrated circuit (MMIC) for E-band transceiver applications is presented in thisletter. This MMIC has been fabricated in a commercial 0.1-μm GaAs pseudomorphic high electron mobility transistor (pHEMT)process on a 2-mil thick substrate wafer. The fabricated MMIC chip has been measured to have a high output power performance of over13 dBm with a high fundamental leakage suppression of more than 38 dBc in the frequency range of 71 to 86 GHz under an input signalcondition of 10 dBm. A microstrip coupled line is used at the output circuit of the doubler section to implement impedance matching andsimultaneously enhance the fundamental leakage suppression. The fabricated chip is has a size of 2.5 mm × 1.2 mm.
KSP 제안 키워드
2 mm, 6 GHz, Active Frequency, E-band, Frequency Range, Frequency doubler, High electron mobility transistor(HEMT), High output power, Leakage suppression, Microstrip Coupled Line, Microwave monolithic integrated circuits(MMIC)