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학술지 Top-Down Processed Silicon Nanowires for Thermoelectric Applications
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저자
장문규, 박영삼, 현영훈, 전명심, 최성진, 정태형, 김종대
발행일
201206
출처
Journal of Nanoscience and Nanotechnology, v.12 no.4, pp.3552-3554
ISSN
1533-4880
출판사
American Scientific Publishers (ASP),
DOI
https://dx.doi.org/10.1166/jnn.2012.5580
협약과제
11ZE1100, ETRI 연구역량 강화를 위한 R&D체계 구축 및 Seed형 기술개발을 위한 창의형 연구 사업, 지경용
초록
50 nm wide n-type silicon nanowires have been manufactured by using a top-down process in order to investigate the thermoelectric properties of silicon nanowire. Nanowire test structures with platinum heaters and temperature sensors were fabricated. The extracted temperature coefficient of resistance (TCR) of the temperature sensors was 786.6 PPM/K. Also, the extracted Seebeck coefficient and power factor of the 50 nm wide phosphorus doped n-type silicon nanowires were -118 μV/K and 2.16 mW쨌K -2 쨌m -1. © 2012 American Scientific Publishers.
키워드
Seebeck coefficient, Silicon nanowire, Thermoelectricity, Top-down process
KSP 제안 키워드
Power factor(P.F), Seebeck coefficient, Silicon nanowires(SiNWs), Test structures, n-Type silicon, temperature coefficient of resistance(TCR), temperature sensor(LM35), thermoelectric applications, thermoelectric properties, top-down process