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학술지 Formation of Metal and Dielectric Liners Using Solution Process for Deep Trench Capacitors
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저자
함용현, 김동표, 백규하, 박건식, 김문근, 권광호, 신홍식, 이기준, 도이미
발행일
201201
출처
Journal of Nanoscience and Nanotechnology, v.12 no.7, pp.5897-5901
ISSN
1533-4880
출판사
American Scientific Publishers (ASP),
DOI
https://dx.doi.org/10.1166/jnn.2012.6317
초록
We demonstrated the feasibility of metal and dielectric liners using a solution process for deep trench capacitor application. The deep Si trench via with size of 10.3 μm and depth of 71 μm were fabricated by Bosch process in deep reactive ion etch (DRIE) system. The aspect ratio was about 7. Then, nano-Ag ink and poly(4-vinylphenol) (PVPh) were used to form metal and dielectric liners, respectively. The thicknesses of the Ag and PVPh liners were about 144 and 830 nm, respectively. When the curing temperature of Ag ?lm increased from 120 to 150 °C, the sheet resistance decreased rapidly from 2.47 to 0.72 ??/sq and then slightly decreased to 0.6 ??/sq with further increasing the curing temperature beyond 150 °C. The proposed liner formation method using solution process is a simple and cost effective process for the high capacity of deep trench capacitor. © 2012 American Scientific Publishers.
키워드
Dielectric Liner, Metal Liner, Nano-Ag Ink, PVPh, Trench Capacitor, TSV
KSP 제안 키워드
4-vinyl phenol(Poly), Ag ink, Bosch process, Curing temperature, Deep reactive ion etch, High-capacity, aspect ratio, cost-effective, deep trench capacitor, nano-Ag, sheet resistance