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학술지 Current Stress Induced Electrical Instability in Transparent Zinc Tin Oxide Thin-Film Transistors
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저자
정우석, 신재헌, 정승묵, 황치선, 이정민, 이종호
발행일
201204
출처
Journal of Nanoscience and Nanotechnology, v.12 no.4, pp.3421-3424
ISSN
1533-4880
출판사
American Scientific Publishers (ASP),
DOI
https://dx.doi.org/10.1166/jnn.2012.5624
협약과제
10MB6800, 디스플레이용 산화물 반도체 조성 및 고밀도 산화물 반도체 타켓 개발, 정우석
초록
Transparent zinc tin oxide thin-film transistors (ZTO-TFTs) [Zn: Sn = 4:1~2:1] have been fabricated so as to estimate the electrical instability under constant current stress. The relative intensity of the drain current noise power spectra density has been shown to have a typical 1/f -noise character, and it is implied that the mobility fluctuation in ZTO-TFT [Zn: Sn=4:1] can be enhanced by a short-range ordering in amorphous Zn-CSn-Coxide, causing a larger shift of the threshold voltage (?봙 th). © 2012 American Scientific Publishers.
키워드
Electrical stability, Low frequency noise, Thin-film transistor, Zn-CSn-COxide, ZTO
KSP 제안 키워드
Constant current(CC), Constant current stress, Drain current, Electrical stability, Low frequency noise, Noise power, Power spectra density, Relative intensity, Short-range ordering, Thin-Film Transistor(TFT), Zinc tin oxide