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학술지 Low Leakage Current AlGaN/GaN on Si-Based Schottky Barrier Diode with Bonding-Pad Electrode Mesa Etching
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저자
장현규, 나제호, 김정진, 박영락, 이현수, 정동윤, 문재경, 고상춘, 남은수
발행일
201507
출처
Japanese Journal of Applied Physics, v.54 no.7, pp.1-5
ISSN
0021-4922
출판사
Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
DOI
https://dx.doi.org/10.7567/JJAP.54.070302
협약과제
15MB1500, 스마트 데이터센터용 차세대 광-전 모듈 기술, 남은수
초록
Bonding-pad electrode-area-etched AlGaN/GaN on a Si-based Schottky barrier diode (SBD) is fabricated. Electrode mesa etching leads to reverse bias leakage current about one order of magnitude lower than that of SBD without electrode mesa etching, but forward currents do not vary greatly, compared with that in conventional SBD, which has no electrode mesa etching.
KSP 제안 키워드
AlGaN/GaN-on-Si, MESA etching, Reverse bias, Schottky barriers(SBs), Si-based, low leakage current, schottky barrier diode(SBD)