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학술지 Organic Nonvolatile Memory Devices Fabricated by Using an Inkjet Printing Method
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저자
양용석, 구재본, 유인규
발행일
201205
출처
한국물리학회, v.60 no.10, pp.1504-1507
ISSN
0374-4884
출판사
한국물리학회
DOI
https://dx.doi.org/10.3938/jkps.60.1504
협약과제
12IC1100, 개별물품 단위 응용을 위한 차세대 RFID 기술 개발, 채종석
초록
We are developing inkjet printing as a low cost, high throughput approach to the fabrication of single-layer organic memory devices. The organic memory devices were composed of a poly (Nvinylcarbazole) (PVK) film with Ag nanoparticles (NPs). The inkjet printing was introduced to embed Ag NPs in the PVK film. The organic memory devices exhibited the behavior of a resistive random access memory and on/off switching ratios of 10 3. This value was obtained through postannealing at 150 °C. The current-voltage characteristics of the devices revealed rewritable and bipolar memory effects during several sweeps of the voltage. © 2012 The Korean Physical Society.
키워드
Ag ink, Bipolar, Inkjet printing, Organic memory device, Switching
KSP 제안 키워드
Ag NPS, Ag ink, Ag nanoparticles, High throughput(HTP), Low-cost, Memory effect, Non-Volatile Memory(NVM), Nonvolatile memory devices, Organic memory device, PVK film, Printing method