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학술지 Characteristics of NiO-AZO Thin Films Deposited by Magnetron Co-Sputtering in an O2 Atmosphere
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저자
H.W. Park, J.H. Bang, K.N. Hui, P.K. Song, 정우석, B.S. Kang
발행일
201212
출처
Materials Letters, v.74, pp.30-32
ISSN
0167-577X
출판사
North-Holland
DOI
https://dx.doi.org/10.1016/j.matlet.2012.01.021
협약과제
12VB1700, 윈도우 일체형 30인치급 터치센서 개발, 정우석
초록
NiO-AZO thin films were prepared by DC and RF magnetron co-sputtering (MCS) system in an O 2 atmosphere. The lowest resistivity of 1.75 × 10 - 1 廓 cm was obtained in the film containing 1.94 mol% Al. The I-V measurements of the p-n junction ((NiO-AZO)/ITO) revealed rectifying characteristics, demonstrating that the film possess p-type conductivity. These results showed good agreement with the X-ray photoelectron spectroscopy (XPS) data by the higher bond enthalpy of Ni-O (382 짹 16.7 kJ/mol) than Zn-O (159 짹 4 kJ/mol). Moreover, the NiO-AZO films had a higher work function than NiO, highlighting the potential applications of transparent contact electrodes in Gallium nitride LEDs. © 2012 Elsevier B.V. All rights reserved.
키워드
Al-doped ZnO, Bond enthalpy, Magnetron co-sputtering, NiO
KSP 제안 키워드
AZO film, AZO thin films, Al-doped ZnO(ZnO:Al), Bond enthalpy, Contact electrodes, Gallium Nitride(GaN), I-V measurement, Initialization Vector(IV), O 2, P-N junction, Petri net(PN)