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학술지 Metal-Etching-Free Direct Delamination and Transfer of Single-Layer Graphene with a High Degree of Freedom
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저자
양상윤, 오중건, 정대율, 최홍규, 유찬학, 신종우, 최춘기, 조병진, 최성율
발행일
201501
출처
Small, v.11 no.2, pp.175-181
ISSN
1613-6810
출판사
Wiley-Blackwell
DOI
https://dx.doi.org/10.1002/smll.201401196
협약과제
14ZE1100, ETRI 창의연구실 사업, 손승원
초록
(Figure Presented) A method of graphene transfer without metal etching is developed to minimize the contamination of graphene in the transfer process and to endow the transfer process with a greater degree of freedom. The method involves direct delamination of single-layer graphene from a growth substrate, resulting in transferred graphene with nearly zero Dirac voltage due to the absence of residues that would originate from metal etching. Several demonstrations are also presented to show the high degree of freedom and the resulting versatility of this transfer method.
KSP 제안 키워드
Degrees of freedom(DOF), High degree, Metal etching, Transfer method, etching-free, graphene transfer, single-layer graphene, transfer process