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학술지 Etching Characteristics and Mechanisms of TiO2 Thin Films in HBr/Ar and Cl2/Ar Inductively-Coupled Plasmas
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저자
장한별, Alexander Efremov, 김대희, 강성칠, 윤선진, 권광호
발행일
201203
출처
Plasma Chemistry and Plasma Processing, v.32 no.2, pp.333-342
ISSN
0272-4324
출판사
Springer
DOI
https://dx.doi.org/10.1007/s11090-012-9352-5
협약과제
10MB6100, 광캡쳐 구조 반사방지막 및 조성기울기를 갖는 Si/SiGe 박막 태양전지 기술 개발, 윤선진
초록
The TiO 2 etching characteristics and mechanisms in HBr/Ar and Cl 2/Ar inductively-coupled plasmas were investigated under fixed gas-mixing ratio and bias power conditions. It was found that in both systems, an increase in gas pressure from 4 to 10 mTorr results in a non-monotonic TiO 2 etching rate, while a variation of input power in the range 500-800 W causes a faster-than-linear acceleration of the etching process. Plasma diagnostics performed by Langmuir probes and zero-dimensional plasma modeling provided data on plasma parameters, steady-state densities, and fluxes of the active species on the etched surface. The model-based analysis of the etching mechanism showed that for the given set of processing parameters, the TiO 2 etch kinetics correspond to the transitional regime of ion-assisted chemical reaction in which a chemical-etch pathway dominates. © Springer Science+Business Media, LLC 2011.
키워드
Cl /Ar plasma 2, Etching mechanism, HBr/Ar plasma, TiO 2
KSP 제안 키워드
Cl 2, Etched surface, Etching characteristics, Etching process, Gas Pressure, HBr/Ar plasma, Inductively-coupled plasma(ICP), Input power, Langmuir probe, Linear acceleration, Mixing ratio