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학술지 The Characteristics of Sub-10 nm Gate-length Erbium-Silicided n-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect-Transistors
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저자
장문규, 이성재
발행일
201201
출처
Thin Solid Films, v.520 no.6, pp.2166-2169
ISSN
0040-6090
출판사
Elsevier,
DOI
https://dx.doi.org/10.1016/j.tsf.2011.09.081
협약과제
11ZE1100, ETRI 연구역량 강화를 위한 R&D체계 구축 및 Seed형 기술개발을 위한 창의형 연구 사업, 지경용
초록
10 and 6 nm erbium-silicided n-type Schottky barrier metal-oxide- semiconductor field-effect transistors (SB-MOSFETs) were manufactured. The manufactured 10 nm n-type SB-MOSFET showed a large on/off current ratio (> 10 6) with low leakage current less than 10 - 5 μA/μm due to the existence of the robust Schottky barrier between source and channel region. The saturation currents were 550 and 320 μA/μm when drain and gate voltages were 2 V and 3 V, for the 10 and 6 nm erbium-silicided n-type SB-MOSFETs, respectively. The manufactured SB-MOSFETs exhibited superior short channel characteristics due to the existence of Schottky barrier between source and channel region. © 2011 Elsevier B.V. All rights reserved.
키워드
Erbium silicide, Metal-oxide-semiconductor field-effect transistors, Schottky barriers, Short channel, Transmission electron microscopy
KSP 제안 키워드
3 V, AND gate, Barrier Metal, Channel Characteristics, Erbium silicide, Field-effect transistors(FETs), Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), N-type, ON/OFF current ratio, SB-MOSFET