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학술지 Charge Injection Engineering of Ambipolar Field-Effect Transistors for High-Performance Organic Complementary Circuits
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저자
백강준, 김주환, 김동윤, Mario Caironi, 김동유, 유인규, Jordan R. Quinn, Antonio Facchetti, 노용영
발행일
201108
출처
ACS Applied Materials & Interfaces, v.3 no.8, pp.3205-3214
ISSN
1944-8244
출판사
American Chemical Society(ACS)
DOI
https://dx.doi.org/10.1021/am200705j
초록
Ambipolar π-conjugated polymers may provide inexpensive large-area manufacturing of complementary integrated circuits (CICs) without requiring micro-patterning of the individual p- and n-channel semiconductors. However, current-generation ambipolar semiconductor-based CICs suffer from higher static power consumption, low operation frequencies, and degraded noise margins compared to complementary logics based on unipolar p- and n-channel organic field-effect transistors (OFETs). Here, we demonstrate a simple methodology to control charge injection and transport in ambipolar OFETs via engineering of the electrical contacts. Solution-processed caesium (Cs) salts, as electron-injection and hole-blocking layers at the interface between semiconductors and charge injection electrodes, significantly decrease the gold (Au) work function (~4.1 eV) compared to that of a pristine Au electrode (~4.7 eV). By controlling the electrode surface chemistry, excellent p-channel (hole mobility ~0.1-0.6 cm2/(Vs)) and n-channel (electron mobility ~0.1-0.3 cm2/(Vs)) OFET characteristics with the same semiconductor are demonstrated. Most importantly, in these OFETs the counterpart charge carrier currents are highly suppressed for depletion mode operation (Ioff < 70 nA when Ion > 0.1-0.2 mA). Thus, high-performance, truly complementary inverters (high gain >50 and high noise margin >75% of ideal value) and ring oscillators (oscillation frequency ~12 kHz) based on a solution-processed ambipolar polymer are demonstrated. © 2011 American Chemical Society.
키워드
ambipolarity, caesium salts, charge injection, complementary circuit, polymer semiconductor, ring oscillator
KSP 제안 키워드
2 kHz, Ambipolar polymer, Au electrode, Charge carriers, Complementary inverter, Conjugated polymer(PFO-co-MEH-PPV), Electrode surface, Field-effect transistors(FETs), High noise margin, High performance, Hole mobility