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학술지 Impact of Amorphous Titanium Oxide Film on the Device Stability of Al/TiO2/Al Resistive Memory
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저자
정후영, 김성규, 이정용, 최성율
발행일
201103
출처
Applied Physics A : Materials Science & Processing, v.102 no.4, pp.967-972
ISSN
0947-8396
출판사
Springer
DOI
https://dx.doi.org/10.1007/s00339-011-6278-3
협약과제
10MB6600, 플렉서블 PoRAM 소재 원천기술 개발, 최성율
초록
We have investigated the role of amorphous titanium oxide film in the reliable bipolar resistive switching of Al/TiO2/Al resistive random access memory devices. As TiO2 deposition temperature decreased, a more stable endurance characteristic was obtained. We proposed that the degradation of the bipolar resistive switching property of Al/TiO2/Al devices is closely related to the imperfect migration of oxygen ions between the top insulating interface layer and the oxygen-deficient titanium oxide during the set and reset operations. In addition, the dependence of the TiO 2 film thickness on the switching property was also studied. As the thickness of the film increased, a reduction in the resistance of the high resistance state rapidly appeared. We attribute the improved endurance performance of thin and low-temperature grown TiO2 devices to the amorphous state with a low film density. © Springer-Verlag 2011.
KSP 제안 키워드
Amorphous state, Amorphous titanium oxide, Bipolar resistive switching, Deposition temperature, Device stability, Endurance characteristic, Film density, Low temperature(LT), Oxygen ions, Oxygen-deficient titanium oxide, Resistive Random Access Memory(RRAM)