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Journal Article
Suppression in the Negative Bias Illumination Instability of Zn-Sn-O Transistor Using Oxygen Plasma Treatment
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- Authors
- Shinhyuk Yang, Kwang Hwan Ji, Un Ki Kim, Cheol Seong Hwang, Sang-Hee Ko Park, Chi-Sun Hwang, Jin Jang, Jae Kyeong Jeong
- Issue Date
- 2011-09
- Citation
- Applied Physics Letters, v.99, no.10, pp.1-3
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- This study examined the effect of oxygen plasma treatment on light-enhanced bias instability in Zn-Sn-O (ZTO) thin film transistors (TFTs). The treated ZTO TFT exhibited only a threshold voltage (Vth) shift of -2.05 V under negative bias illumination stress (NBIS) conditions, whereas the pristine device suffered from a negative Vth shift of 3.76 V under identical conditions. X-ray photoelectron spectroscopic analysis revealed that the oxygen vacancy defect density was diminished via the oxygen plasma treatment. This suggests the Vth degradation under NBIS is due to photo-transition of oxygen vacancy defects. © 2011 American Institute of Physics.
- KSP Keywords
- Effect of oxygen, Spectroscopic Analysis, Thin-Film Transistor(TFT), Vth shift, X-ray photoelectron spectroscopic, Zn-Sn-O(ZTO), bias instability, defect density, negative bias illumination stress, oxygen plasma treatment, oxygen vacancy defects