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학술지 Transition of Dominant Instability Mechanism Depending on Negative Gate Bias under Illumination in Amorphous In-Ga-Zn-O Thin Film Transistor
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저자
오힘찬, 윤성민, 유민기, 황치선, 양신혁, 박상희
발행일
201101
출처
Applied Physics Letters, v.98 no.3, pp.1-3
ISSN
0003-6951
출판사
American Institute of Physics (AIP)
DOI
https://dx.doi.org/10.1063/1.3540500
협약과제
10MB3700, 고품위 Plastic AMOLED 원천기술 개발, 유병곤
초록
The gate bias dependence on the negative bias instability under illumination was examined. As the gate bias got more negative, dominant mechanism was changed from simple charge trapping to that accompanied by generation of subgap states. Degree of threshold voltage shift was not monotonously dependent on the magnitude of negative gate bias. It is strongly related with the corresponding instability modes for different gate bias regimes. The transition of instability mechanism depends on how much the gate bias stabilizes ionized oxygen vacancy states. © 2011 American Institute of Physics.
KSP 제안 키워드
Amorphous InGaZnO, Bias dependence, Bias instability, Charge trapping, Dominant mechanism, In-Ga-Zn-O(IGZO), Instability modes, Negative bias, Oxygen vacancies, Thin-Film Transistor(TFT), Threshold voltage shift