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학술지 Water-Related Abnormal Instability of Transparent Oxide/Organic Hybrid Thin Film Transistors
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저자
양신혁, 황치선, 이정익, 윤성민, 유민기, 조경익, 박상희, 김세현, 박찬언, 장진
발행일
201103
출처
Applied Physics Letters, v.98 no.10, pp.1-3
ISSN
0003-6951
출판사
American Institute of Physics (AIP)
DOI
https://dx.doi.org/10.1063/1.3551536
협약과제
10MB3700, 고품위 Plastic AMOLED 원천기술 개발, 유병곤
초록
We have fabricated fully patterned transparent oxide/organic hybrid transistors on glass substrates that contain In-Ga-Zn-O as the active layer and a poly(4-vinyl phenol-comethyl methacrylate) copolymer as the dielectric layer. These devices exhibit a saturation mobility of 6.04cm2 /V s, a threshold voltage value of 3.53 V, a subthreshold slope of 360 mV/decade, and an on-off ratio of 1.0× 109 at a maximum processing temperature of 200 °C. We found that the bias stability characteristics of the hybrid transistors are dependent on the ambient conditions, but can also be dramatically improved by applying a hydrophobic organic passivation layer to the gate insulator. © 2011 American Institute of Physics.
KSP 제안 키워드
3 V, 4-vinyl phenol(Poly), Active Layer, Gate insulator, Glass substrate, In-Ga-Zn-O(IGZO), Organic passivation, Processing temperature, Saturation mobility, Stability characteristics, Subthreshold slope(SS)