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학술지 Characteristics of Ti-Doped ITO Films Grown by DC Magnetron Sputtering
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저자
정승묵, 신재헌, 정우석, 황치선, 조경익, 김영진
발행일
201201
출처
Ceramics International, v.38 no.SUPPL. 1, pp.S617-S621
ISSN
0272-8842
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.ceramint.2011.05.110
협약과제
10MB6800, 디스플레이용 산화물 반도체 조성 및 고밀도 산화물 반도체 타켓 개발, 정우석
초록
We have investigated the effects of Ti doping on the structural, optical, and electrical properties of indium tin oxide (ITO) thin films prepared by direct-current (DC) sputtering at room temperature. It is observed that the Ti doping changes the microstructure of the ITO films from amorphous to polycrystalline improving the electrical properties. The optimized ITO:Ti thin film after annealing shows a carrier concentration of 6.24 × 10 20 cm -3, a mobility of 34 cm 2/V s, and a resistivity of 2.3 × 10 -4 廓 cm. The ITO:Ti film also shows a better thermal stability up to 450°C. © 2011 Elsevier Ltd and Techna Group S.r.l.
키워드
C. Electrical properties, C. Thermal properties, D. TiO 2, Sputtering
KSP 제안 키워드
Carrier concentration, Direct current(DC), ITO film, Room-temperature, Thermal stability(TGA), Ti doping, Ti film, Ti thin film, Ti-doped ITO, dc Magnetron sputtering, electrical properties(I-V curve)