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학술지 Fabrication and Electrical Properties of an AlGaN/GaN HEMT on SiC with a Taper-Shaped Backside Via Hole
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저자
민병규, 김성일, 이종민, 윤형섭, 김해천, 안호균, 조규준, 강동민, 이상흥, 주철원, 임종원, 전병철, 임종원
발행일
201508
출처
한국물리학회, v.67 no.4, pp.718-722
ISSN
0374-4884
출판사
한국물리학회
DOI
https://dx.doi.org/10.3938/jkps.67.718
협약과제
15MB1800, 고효율 GaN 기반 기지국/단말기용 핵심부품 및 모듈 개발, 임종원
초록
SiC substrates and GaN/AlGaN epitaxial layers were etched by using an inductively-coupled plasma (ICP) in order to electrically connect the backside metal to the source electrode pads on the front-side of an AlGaN/GaN high-electron-mobility transistor (HEMT) device. The shape of an etched via hole was a tapered cylinder with a larger diameter at the entrance. The surfaces on the bottom and a wall of the via hole were very smooth in comparison with the results on the most recently published papers. Through optimization of the etching conditions, the etch-stops on the GaN epi-layer and on the source pad were successfully completed. The electrical properties of the device with the backside via holes were not critically different from those of the device without the backside via holes. In this paper, the fabrication process and the electrical properties of AlGaN/GaN HEMTs on SiC substrates with taper-shaped backside via holes are reported for the first time.
키워드
AlGaN/GaN, Backside, HEMT, ICP, SiC, Taper, Via hole
KSP 제안 키워드
AlGaN/GaN HEMTs, Epitaxial layer, Etching conditions, Front-side, High electron mobility transistor(HEMT), Inductively-coupled plasma(ICP), Via-hole, electrical properties(I-V curve), fabrication process