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학술지 Bending Characteristics of Ferroelectric Poly(Vinylidene Fluoride Trifluoroethylene) Capacitors Fabricated on Flexible Polyethylene Naphthalate Substrate
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저자
윤성민, 정순원, 양신혁, 박상희, 유병곤, Hiroshi Ishiwara
발행일
201105
출처
Current Applied Physics, v.11 no.3 SUPPL., pp.S219-S224
ISSN
1567-1739
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.cap.2011.03.011
협약과제
11MB2300, 고품위 Plastic AMOLED 원천기술 개발, 유병곤
초록
Ferroelectric capacitors using poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] were fabricated on the plastic polyethylene naphthalate (PEN) substrate for the various applications of flexible-type nonvolatile memories. It was successfully confirmed that the Au/P(VDF-TrFE)/Au capacitors showed sound ferroelectric characteristics even when they were fabricated using a lithography-compatible patterning process at low temperature below 150 °C in the PEN. The behaviors of ferroelectric polarization and saturation as a function of the applied electric field were not so sensitive to the changes in bending curvature radius. However, because small variations in switching properties for the polarization reversal were also observed especially for higher frequency and lower voltage regions, suitable operation schemes should be designed for the flexible memory devices with lower voltage and higher speed operations even at bending situations. © 2011 Elsevier B.V. All rights reserved.
키워드
Ferroelectric capacitor, Flexible memory, P(VDF-TrFE), Plastic substrate
KSP 제안 키워드
Applied electric field, Bending characteristics, Bending curvature radius, Ferroelectric characteristics, Low temperature(LT), Non-Volatile Memory(NVM), Patterning process, Plastic substrate, Polarization reversal, Polyethylene naphthalate, Switching properties