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학술지 High-Performance Top-Gated Organic Field-Effect Transistor Memory using Electrets for Monolithic Printed Flexible NAND Flash Memory
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저자
백강준, 김동윤, 김주환, 양병도, 강민지, 정순원, 유인규, 김동유, 노용영
발행일
201207
출처
Advanced Functional Materials, v.22 no.14, pp.2915-2926
ISSN
1616-301X
출판사
John Wiley & Sons
DOI
https://dx.doi.org/10.1002/adfm.201200290
협약과제
12IC1100, 개별물품 단위 응용을 위한 차세대 RFID 기술 개발, 채종석
초록
High-performance top-gated organic field-effect transistor (OFET) memory devices using electrets and their applications to flexible printed organic NAND flash are reported. The OFETs based on an inkjet-printed p-type polymer semiconductor with efficiently chargeable dielectric poly(2-vinylnaphthalene) (PVN) and high-k blocking gate dielectric poly(vinylidenefluoride- trifluoroethylene) (P(VDF-TrFE)) shows excellent non-volatile memory characteristics. The superior memory characteristics originate mainly from reversible charge trapping and detrapping in the PVN electret layer efficiently in low-k/high-k bilayered dielectrics. A strategy is devised for the successful development of monolithically inkjet-printed flexible organic NAND flash memory through the proper selection of the polymer electrets (PVN or PS), where PVN/- and PS/P(VDF-TrFE) devices are used as non-volatile memory cells and ground- and bit-line select transistors, respectively. Electrical simulations reveal that the flexible printed organic NAND flash can be possible to program, read, and erase all memory cells in the memory array repeatedly without affecting the non-selected memory cells. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
키워드
electrets, NAND flash, organic field-effect transistors, organic memory, printed electronics
KSP 제안 키워드
Charge trapping, Co. KGaA, Field-effect transistors(FETs), High performance, High-K, Memory Array, Non-Volatile Memory(NVM), Organic field-effect, Reversible charge, Transistor memory, VDF-TrFE