ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 Improved Thin Film Transistor Performance of Solution-Processed-Zinc-Oxide Nanorods with Spin-on-Glass Capping Layer
Cited 4 time in scopus Download 0 time Share share facebook twitter linkedin kakaostory
저자
Musarrat Hasan, 오지영, 박종혁, 임상철, 김희옥, 강승열
발행일
201209
출처
Current Applied Physics, v.12 no.SUPPL. 1, pp.e18-e23
ISSN
1567-1739
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.cap.2011.08.005
협약과제
11MB1600, 모바일 플렉시블 입출력 플랫폼, 조경익
초록
Due to the vulnerability of various organic and oxide materials to the atmosphere, a protective layer is often used to improve device performance and stability. In this study, we use a spin-on-glass (SOG) layer to encapsulate a solution-processed-zinc-oxide (ZnO) film. ZnO loses oxygen very easily to the atmosphere and even loses Zn at relatively low temperatures. An SOG capping layer prevents the loss of oxygen without degrading its crystalline properties. We demonstrate the properties of a bottom-gate transistor with a capping layer; it shows improved electrical properties with a mobility of 0.5 cm 2/V.s. and stability. Physical characterization reveals that the defect density with a capping layer is much lower than it is without it. A capping layer can also prevent the loss of oxygen at the annealing temperature of 350 °C. © 2012 Elsevier Inc. All rights reserved.
키워드
Defect chemistry, SOG capping layer, ZnO nanorods
KSP 제안 키워드
Annealing temperature, Bottom gate, Capping layer, Crystalline properties, Defect chemistry, Low temperature(LT), Oxide material, Physical Characterization, Protective layer, Solution-processed, Spin-on-glass