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학술지 Flexible Organic Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer Substrates
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저자
정순원, 구재본, 박찬우, 나복순, 오지영, 이상석
발행일
201510
출처
Journal of Nanoscience and Nanotechnology, v.15 no.10, pp.7513-7517
ISSN
1533-4880
출판사
American Scientific Publishers (ASP)
DOI
https://dx.doi.org/10.1166/jnn.2015.11137
협약과제
14MB1400, 미래광고 서비스를 위한 에너지절감형 환경적응 I/O (Input/Output) 플랫폼 기술 개발, 황치선
초록
In this study, we fabricated flexible organic thin-film transistors (OTFTs) on a polydimethysiloxane (PDMS) elastomer substrate using blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(methyl methacrylate) (PMMA) and amorphous conjugated polymer poly(9,9-dioctylfuorene-co-bithiophene) (F8T2) as the gate dielectric and semiconducting layer, respectively. All the processes were performed at elastomer-compatible temperatures of below 100 °C. We confirmed the basic properties of the P(VDF-TrFE):PMMA blend film on the PDMS substrate, and the characteristics of the fabricated flexible OTFTs were also evaluated. A subthreshold voltage swing of 2.5 V/decade, an Ion/Ioff ratio greater than 105, field-effect mobility of 1.2 × 10-3 cm2 V-1 s-1, and a 10-11 A gate leakage current were obtained. These characteristics did not degrade at a bending radius of 1 cm. For the OTFTs, the endurable maximum strain without degradation in the field-effect mobility of the PDMS elastomers was approximately 2%.
키워드
Bending, Flexible, Organic thin film transistor, Polydimethylsiloxane
KSP 제안 키워드
Basic properties, Bending radius, Conjugated polymer(PFO-co-MEH-PPV), First Stokes(S1), Organic thin-film transistors (otfts), Thin-Film Transistor(TFT), VDF-TrFE, Voltage swing, blend film, elastomer substrate, field-effect mobility