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학술지 Fabrication of Stretchable Organic-Inorganic Hybrid Thin-Film Transistors on Polyimide Stiff-Island Structures
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저자
정순원, 구재본, 박찬우, 나복순, 오지영, 이상석
발행일
201510
출처
Journal of Nanoscience and Nanotechnology, v.15 no.10, pp.7526-7530
ISSN
1533-4880
출판사
American Scientific Publishers (ASP)
DOI
https://dx.doi.org/10.1166/jnn.2015.11151
협약과제
14MB1400, 미래광고 서비스를 위한 에너지절감형 환경적응 I/O (Input/Output) 플랫폼 기술 개발, 황치선
초록
In this study, stretchable organic-inorganic hybrid thin-film transistors (TFTs) are fabricated on a polyimide (PI) stiff-island/elastomer substrate using blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(methyl methacrylate) (PMMA) and oxide semiconductor In-Ga-Zn-O as the gate dielectric and semiconducting layer, respectively. Carrier mobility, Ion/Ioffratio, and subthreshold swing (SS) values of 6.1 cm2 V-1 s-1, 107, and 0.2 V/decade, respectively, were achieved. For the hybrid TFTs, the endurable maximum strain without degradation of electrical properties was approximately 49%. These results correspond to those obtained in the first study on fabrication of stretchable hybrid-type TFTs on elastomer substrate using an organic gate insulator and oxide semiconducting active channel structure, thus indicating the feasibility of a promising device for stretchable electronic systems.
키워드
Indium gallium zinc oxide, Polyimide, Stiff-island, Stretchable hybrid transistor
KSP 제안 키워드
Active channel, Carrier mobility, Channel structure, Electronic systems, First Stokes(S1), Gate insulator, Hybrid type, In-Ga-Zn-O(IGZO), Indium gallium zinc oxide, Organic-inorganic hybrid, Oxide semiconductor