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학술지 GaN HEMT MMIC Doherty Power Amplifier with High Gain and High PAE
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저자
박윤식, 이주연, 지승훈, 김석현, 김철호, 박봉혁, 김범만
발행일
201503
출처
IEEE Microwave and Wireless Components Letters, v.25 no.3, pp.187-189
ISSN
1531-1309
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LMWC.2015.2390536
협약과제
14MI8100, 밀리미터파 5G 이동통신 시스템 개발, 김태중
초록
This paper presents an approach to maximize the gain and power-added efficiency (PAE) of a Doherty power amplifier (PA) using a 0.25 μm GaN pHEMT. The conventional carrier PA has an input matching for the ROPT load and does not deliver the 3 dB higher gain with 2ROPT load due to the mismatch and it degrades gain and PAE of the PA. To solve the problem, the input match of the carrier PA is optimized at the back-off power level with the 2ROPT output load, while the input is mismatched at a high power level. A Doherty PA with the concept is designed and implemented using a GaN pHEMT MMIC process at 1.8 GHz. The measured average output power, power-added efficiency and gain are 35.6 dBm, 56.3%, and 18.9 dB for a 10 MHz LTE signal with a 6.5 dB PAPR.
키워드
Doherty power amplifier (DPA), drain efficiency (DE), Gallium nitride (GaN), long term evolution (LTE), power-added efficiency (PAE)
KSP 제안 키워드
Back-off, Doherty PA, Doherty power amplifier(DPA), GaN HEMT, High power, Input matching, Long term Evolution(LTE), Output Load, Output power, Power Levels, Power added efficiency(PAE)