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학술지 Organic Thin-Film Transistors with Short Channel Length Fabricated by Reverse Offset Printing
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저자
김민석, 유인규, 한현, 정순원, 김태엽, 주병권, 구재본
발행일
201105
출처
Electrochemical and Solid-State Letters, v.14 no.8, pp.H333-H336
ISSN
1099-0062
출판사
Electrochemical Society (ECS)
DOI
https://dx.doi.org/10.1149/1.3591435
초록
We report on the fabrication of organic thin-film transistors (OTFTs) with a reverse-offset-printed Ag metal source/drain (S/D) electrode pattern. The printed electrodes had a channel length of less than 5 μm and resistivity of 3 × 10-6 ?? cm. The OTFTs were fabricated from regioregular poly(3-hexylthiophene) as the semiconductor and poly(methyl methacrylate) as the gate insulator. The transfer and output characteristics of a top-gate OTFT with a channel length of 5 μm were evaluated. Here we discuss in detail the technological challenges encountered with reverse offset printing and the failure modes. © 2011 The Electrochemical Society. [DOI: 10.1149/1.3591435] All rights reserved.
KSP 제안 키워드
3-hexylthiophene(SEM poly), Channel Length, Electrode pattern, Failure mode, Gate insulator, Organic thin-film transistors (otfts), Printed electrodes, Regioregular poly(3-hexylthiophene)(RR-P3HT), Short channel, Thin-Film Transistor(TFT), metal source/drain(S/D)