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학술지 Effect of Inductively Coupled Plasma on the Structural and Electrical Properties of Ti-Doped ITO Films Formed by IPVD
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저자
홍찬화, 신재헌, 박래만, 김경현, 김보슬, 송창우, 양지웅, 서우형, 주병권, 정우석
발행일
201510
출처
Journal of Nanoscience and Nanotechnology, v.15 no.10, pp.8099-8102
ISSN
1533-4880
출판사
American Scientific Publishers (ASP)
DOI
https://dx.doi.org/10.1166/jnn.2015.11289
협약과제
14PB5400, 하이브리드 전극을 활용한 차세대 멀티터치 IC 및 모듈 개발, 정우석
초록
In this study, we investigated Ti-doped ITO films formed through ionized physical vapor deposition (IPVD) using inductively coupled plasma (ICP). Ti-doped ITO thin films showed an enhanced mobility with ICP power; owing to the improved crystallinity, and the sheet resistance of the Ti-doped ITO (30 nm) largely decreased from 295.1 to 134.5 ohm/sq, even during at room temperature. Therefore, IPVD technology offers a useful tool for transparent electrodes with a large area window-unified touch-screen panel.
키워드
ICP, IPVD, TCO, Ti-doped ITO
KSP 제안 키워드
Enhanced mobility, ICP power, ITO film, ITO thin film, Improved crystallinity, Inductively-coupled plasma(ICP), Ionized physical vapor deposition(IPVD), Room-temperature, Structural and electrical properties, Ti-doped ITO, electrical properties(I-V curve)