ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs
Cited 3 time in scopus Download 6 time Share share facebook twitter linkedin kakaostory
저자
조규준, 안호균, 김성일, 강동민, 이종민, 민병규, 이상흥, 김동영, 윤형섭, 김해천, 이경호, 주철원, 임종원, 권용환, 남은수
발행일
201508
출처
한국물리학회, v.67 no.4, pp.682-686
ISSN
0374-4884
출판사
한국물리학회
DOI
https://dx.doi.org/10.3938/jkps.67.682
협약과제
14DR1400, Ka대역 GaN MMIC 기반 SSPA 개발 , 노윤섭
초록
An AlGaN/GaN high electron mobility transistor (HEMT) with a T-shaped gate employing a gate-foot-connected field plate is presented. Similar to other devices with gate connected field plates the device described in this paper is a variation of the ??-shaped gate with the ?쐆ead?? of the Tshaped gate attached at the top. The proposed device has a higher breakdown voltage and a lower leakage current due to the attached field plate while maintaining the advantages of the T-shaped gate structure, which are a low gate resistance and a low noise level. In addition, the field plate deposition step during the fabrication process involves a partial covering of the ?쐄oot?? of the gate which showed a possibility for a gate length reduction.
키워드
Breakdown voltage, Field plate, GaN, HEMT, T-shaped gate
KSP 제안 키워드
AlGaN/GaN HEMTs, Breakdown voltage(BDV), Field Plate, Gate resistance, High electron mobility transistor(HEMT), Leakage current, Low noise, T-shaped gate, fabrication process, gate length, noise level