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학술지 DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Gate Recessed by Using ICP Etching of BCl3/Cl2
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저자
윤형섭, 민병규, 이종민, 강동민, 안호균, 김성일, 주철원, 김해천, 임종원
발행일
201508
출처
한국물리학회, v.67 no.4, pp.654-657
ISSN
0374-4884
출판사
한국물리학회
DOI
https://dx.doi.org/10.3938/jkps.67.654
협약과제
15MB1800, 고효율 GaN 기반 기지국/단말기용 핵심부품 및 모듈 개발, 임종원
초록
We fabricated a 0.17-μm gate-length AlGaN/GaN high electron mobility transistor (HEMT) on SiC recessed by using ICP gate etching with a gas mixture of BCl3/Cl2. The ICP gate recess process exhibited an etch rate of 20 nm/min for the AlGaN layer and the clean surface characteristics at the etched AlGaN/gate metal interface for the AlGaN/GaN HEMT devices. The recessed 0.17 μm × 200 μm AlGaN/GaN HEMT devices showed good DC characteristics, having a high gateto-drain breakdown voltage of -177 V, a good Schottky diode ideality factor of 1.32, an extrinsic transconductance (gm) of 245 mS/mm, and a threshold voltage (Vth) of -2.6 V. The recessed 0.17 μm × 200 μm AlGaN/GaN HEMT devices also exhibited high RF performance, having a cut-off frequency (fT) of 46 GHz and a maximum oscillation frequency (fmax) of 150 GHz.
키워드
AlGaN/GaN HEMT, Cut-off frequency, ICP gate recess etching, Maximum oscillation frequency
KSP 제안 키워드
20 nm, 6 GHz, AlGaN/GaN HEMTs, Breakdown voltage(BDV), Cut-off frequency, DC Characteristics, Diode ideality factor, Etch rates, GaN HEMT devices, Gas mixture, Gate recess