ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 0.34 VT AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal
Cited 42 time in scopus Download 11 time Share share facebook twitter linkedin kakaostory
저자
이현수, 정동윤, 박영락, 나제호, 장현규, 이형석, 전치훈, 박준보, 류상욱, 고상춘, 남은수
발행일
201511
출처
IEEE Electron Device Letters, v.36 no.11, pp.1132-1134
ISSN
0741-3106
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LED.2015.2475178
협약과제
15MB1500, 스마트 데이터센터용 차세대 광-전 모듈 기술, 남은수
초록
A large GaN-Schottky barrier diode (SBD) with a recessed dual anode metal is proposed to achieve improved the forward characteristics without a degradation of the reverse performances. Using optimized dry etch condition for a large device, the electrical characteristics of the device are demonstrated when applying the recessed dual anode metal and changing the recess depths. The device size and channel width are 4 mm2 and 63 mm, respectively. The 16-nm recessed dual anode metal SBD has a turn-on voltage of 0.34 V, a breakdown voltage of 802 V, and a reverse leakage current of 1.82μ A/mm at -15 V. The packaged SBD exhibits a forward current of 6.2 A at 2 V and a reverse recovery charge of 11.54 nC.
키워드
AlGaN/GaN on Si, low turn-on voltage, recess dual anode metal, Schottky barrier diode (SBD)
KSP 제안 키워드
16 nm, AlGaN/GaN-on-Si, Breakdown voltage(BDV), Channel Width, Device size, Dry etch, Forward current, Reverse leakage current, Schottky barriers(SBs), electrical characteristics, low turn-on voltage