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학술지 Polymer Dielectrics and Orthogonal Solvents Effects for High-Performance Inkjet-Printed Top-Gated P-channel Polymer Field-Effect Transistors
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저자
백강준, 김동윤, 정순원, 구재본, 유인규, 나윤채, 김동유, 노용영
발행일
201112
출처
ETRI Journal, v.33 no.6, pp.887-896
ISSN
1225-6463
출판사
한국전자통신연구원 (ETRI)
DOI
https://dx.doi.org/10.4218/etrij.11.0111.0321
초록
We investigated the effects of a gate dielectric and its solvent on the characteristics of top-gated organic fieldeffect transistors (OFETs). Despite the rough top surface of the inkjet-printed active features, the charge transport in an OFET is still favorable, with no significant degradation in performance. Moreover, the characteristics of the OFETs showed a strong dependency on the gate dielectrics used and its orthogonal solvents. Poly(3-hexylthiophene) OFETs with a poly(methyl methacrylate) dielectric showed typical p-type OFET characteristics. The selection of gate dielectric and solvent is very important to achieve high-performance organic electronic circuits. © 2011 ETRI.
키워드
Dielectric, Inkjet-printing, OFET, Solvent
KSP 제안 키워드
3-hexylthiophene(SEM poly), Charge transport, Electronic circuit, Field-effect transistors(FETs), High performance, Organic Electronics, P-Channel, Polymer dielectric, gate dielectric, inkjet printing, inkjet-printed