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학술지 A Subthreshold CMOS RF Front-End Design for Low-Power Band-III T-DMB/DAB Receivers
Cited 11 time in scopus Download 12 time Share share facebook twitter linkedin kakaostory
저자
김성도, 최장홍, 이주현, 구본태, 김천수, 엄낙웅, 유현규, 정희범
발행일
201112
출처
ETRI Journal, v.33 no.6, pp.969-972
ISSN
1225-6463
출판사
한국전자통신연구원 (ETRI)
DOI
https://dx.doi.org/10.4218/etrij.11.0211.0055
협약과제
10MB2800, 차세대 무선 융합 단말용 Advanced Digital RF 기술 개발, 유현규
초록
This letter presents a CMOS RF front-end operating in a subthreshold region for low-power Band-III mobile TV applications. The performance and feasibility of the RF front-end are verified by integrating with a low-IF RF tuner fabricated in a 0.13-μm CMOS technology. The RF front-end achieves the measured noise figure of 4.4 dB and a wide gain control range of 68.7 dB with a maximum gain of 54.7 dB. The power consumption of the RF front-end is 13.8 mW from a 1.2 V supply. © 2011 ETRI.
키워드
Band-III, CMOS, DAB, Low-IF, Mobile TV, Subthreshold, T-DMB, Tuner
KSP 제안 키워드
CMOS RF, CMOS Technology, Control range, Gain Control, Low-IF, Low-Power, Mobile TV, Noise Figure(NF), Power Consumption, Power band, RF front end