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학술지 Study of the Electroless Deposition of Ni for Betavoltaic Battery Using PN Junction without Seed Layer
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저자
김진주, 엄영랑, 최병건, 손광재
발행일
201510
출처
Journal of Nanomaterials, v.2015, pp.1-6
ISSN
1687-4110
출판사
Hindawi Publishing
DOI
https://dx.doi.org/10.1155/2015/283291
협약과제
14PS5800, 외부충전없이 반영구적으로 사용이 가능한 10mWH/cm2급 동위원소기반 전고상 하이브리드 전지 원천기술 개발, 박경환
초록
The method and conditions of Ni plating were optimized to maximize the output of a betavoltaic battery using radioactive 63Ni. The difference of the short circuit currents between the pre-and postdeposition of 63Ni on the PN junction was 90 nA at the I-V characteristics. It is suspected that the beta rays emitted from 63Ni did not deeply penetrate into the PN junction due to a Ni seed layer with a thickness of 500 횇. To increase the penetration of the beta rays, electroless Ni plating was carried out on the PN junction without a seed layer. To establish the electroless coating conditions for 63Ni, nonradioactive Ni was deposited onto a Si wafer without flaws on the surface. This process can be applied for electroless Ni plating on a PN junction semiconductor using radioactive 63Ni in further studies.
KSP 제안 키워드
Electroless Ni plating, Electroless coating, Electroless deposition, I-V characteristic(Transport property), Initialization Vector(IV), P-N junction, Seed layer, Short-Circuit Current, Si wafer