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학술지 Low-Temperature Processed Flexible In-Ga-Zn-O Thin Film Transistors Exhibiting High Electrical Performance
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저자
양신혁, 박준용, 윤성민, 유민기, 오힘찬, 황치선, 김기현, 박상희, 장진
발행일
201112
출처
IEEE Electron Device Letters, v.32 no.12, pp.1692-1694
ISSN
0741-3106
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LED.2011.2167122
협약과제
11MB2300, 고품위 Plastic AMOLED 원천기술 개발, 유병곤
초록
In-Ga-Zn-O thin-film transistors processed at 150 { \circ}C} on laminated polyethylene naphthalate substrates exhibiting high electrical performances such as a saturation mobility of 24.26 cm/(V s}), a subthreshold slope of 140 mV/dec, a turn-on voltage V\rm on of -0.41 V, and an on-off ratio of 1.8 \times 10}9 were fabricated. Cool-off-type adhesive was adopted to easily detach the plastic substrate from the carrier holder. Devices also showed highly uniform characteristics with a variation of 0.09 V in turn-on voltage. Stability characteristics under the positive gate bias stress can be enhanced by increasing the annealing time at 150°C. © 2006 IEEE.
키워드
Oxide, Sputtering, Thin-film transistor (TFT), Transparent
KSP 제안 키워드
Annealing time, Gate bias stress, High electrical performance, In-Ga-Zn-O(IGZO), Low temperature(LT), Plastic substrate, Polyethylene naphthalate, Saturation mobility, Stability characteristics, Subthreshold slope(SS), Thin-Film Transistor(TFT)