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학술지 High-Performance Pentacene Thin-Film Transistors Fabricated by Printing Technology
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저자
윤창훈, 김민석, 이승원, 문한얼, 박선민, 구재본, 김정원, 유인규, 유승협
발행일
201110
출처
IEEE Electron Device Letters, v.32 no.10, pp.1454-1456
ISSN
0741-3106
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LED.2011.2162483
협약과제
11MC2500, 개별물품 단위 응용을 위한 차세대 RFID 기술 개발, 채종석
초록
A high-performance bottom-contact pentacene thin-film transistor (TFT) is realized with its channel and electrodes fabricated by a simple printing process. By applying reverse offset printing of a nanosilver paste ink to the source/drain electrodes and organic vapor-jet printing to the thin pentacene layer, TFTs with a channel length of 20 μm are realized in a precise yet relatively simple fashion. The oxide formed during the processing of the silver ink is shown to help reduce the injection barrier between the source and pentacene, making it possible to realize high-performance bottom-contact TFTs without special treatment for the electrodes. © 2011 IEEE.
키워드
Organic thin-film transistor (OTFT), organic vapor-jet printing (OVJP), pentacene, printed electronics, reverse offset printing (ROP)
KSP 제안 키워드
Bottom contact, Channel Length, High performance, Jet printing, Organic thin-film transistors, Organic vapor, Pentacene layer, Pentacene thin-film transistors, Printing process, Printing technology, Source/drain electrodes