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학술대회 Photoelectric Characteristics of Schottky Diode Based on a Ge/Si Core/Shell Nanowire
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저자
서동우, 전린, 루웨이
발행일
201512
출처
International Conference on Sensing Technology (ICST) 2015, pp.199-202
DOI
https://dx.doi.org/10.1109/ICSensT.2015.7438389
초록
Schottky photodiode fabricated with Ge/Si core/shell nanowires grown on Si (111) was quantitatively analyzed in terms of electrical properties as well as microstructure. The present device comprised of single nanowire grown by VLS process is quite sensitive enough to detect less than 1 pA at the mid infrared of 3 μm. The barrier of the present nanowire Schottky photodiode isj 1.5 volts. We scrutinized the electrical characteristics of the nanoscale Schottky junction both at forward and reverse bias ranges with thermionic model.
키워드
Ge/Si, infrared, nanowire, photodetector, sensor
KSP 제안 키워드
Core/shell nanowires, Forward and reverse, Ge/Si core/shell, Mid-infrared(MIR), Reverse bias, Schottky photodiode, Single nanowire, VLS process, electrical characteristics, electrical properties(I-V curve), photoelectric characteristics