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학술지 High-Performance Amorphous Multilayered ZnO-SnO2 Heterostructure Thin-Film Transistors: Fabrication and Characteristics
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저자
이수재, 황치선, 피재은, 양종헌, 변춘원, 추혜용, 조경익, 조성행
발행일
201512
출처
ETRI Journal, v.37 no.6, pp.1135-1142
ISSN
1225-6463
출판사
한국전자통신연구원 (ETRI)
DOI
https://dx.doi.org/10.4218/etrij.15.0114.0743
협약과제
14MB1400, 미래광고 서비스를 위한 에너지절감형 환경적응 I/O (Input/Output) 플랫폼 기술 개발, 황치선
초록
Multilayered ZnO-SnO2 heterostructure thin films consisting of ZnO and SnO2 layers are produced by alternating the pulsed laser ablation of ZnO and SnO2 targets, and their structural and field-effect electronic transport properties are investigated as a function of the thickness of the ZnO and SnO2 layers. The performance parameters of amorphous multilayered ZnO-SnO2 heterostructure thin-film transistors (TFTs) are highly dependent on the thickness of the ZnO and SnO2 layers. A highest electron mobility of 43 cm2/V횂?쥀, a low subthreshold swing of a 0.22 V/dec, a threshold voltage of 1 V, and a high drain current on-to-off ratio of 1010 are obtained for the amorphous multilayered ZnO(1.5 nm)- SnO2(1.5 nm) heterostructure TFTs, which is adequate for the operation of next-generation microelectronic devices. These results are presumed to be due to the unique electronic structure of amorphous multilayered ZnOSnO2 heterostructure film consisting of ZnO, SnO2, and ZnO-SnO2 interface layers.
키워드
Heterostructure, Oxide semiconductor, SnO2, Transistor, ZnO
KSP 제안 키워드
5 nm, Drain current, Electronic structures, Electronic transport properties, High performance, I-V characteristic(Transport property), Microelectronic devices, Next-generation, Oxide semiconductor, Performance parameters, Thin-Film Transistor(TFT)