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학술지 Analysis of Transconductance (gm) in Schottky-Barrier MOSFETs
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저자
최성진, 최철종, 김지연, 장문규, 최양규
발행일
201102
출처
IEEE Transactions on Electron Devices, v.58 no.2, pp.427-432
ISSN
0018-9383
출판사
IEEE
DOI
https://dx.doi.org/10.1109/TED.2010.2092778
협약과제
11ZE1100, ETRI 연구역량 강화를 위한 R&D체계 구축 및 Seed형 기술개발을 위한 창의형 연구 사업, 지경용
초록
This paper experimentally investigates the unique behavior of transconductance (gm)in the Schottky-barrier metaloxidesemiconductor field-effect transistors (SB-MOSFETs) with various silicide materials. When the Schottky-barrier height (SBH) or a scaling parameter is not properly optimized, a peculiar shape of gmis observed. Thus, gmcan be used as a novel metric that exhibits the transition of the carrier injection mechanisms from a thermionic emission (TE) to thermally assisted tunneling (TU) in the SB-MOSFETs. When the local maximum point of gmis observed, it can be expected that an incomplete transition occurs between TE and TU in SB-MOSFETs. When a dopant-segregation (DS) technique is implemented in the SB-MOSFETs, however, the carrier injection efficiency from the source to the channel is significantly improved, although the SBH is not minimized. As a consequence, the peculiar shape of the gmdisappears, i.e., a complete transition from TE to TU can be enabled by the DS technique. © 2006 IEEE.
키워드
Current flow mechanism, dopant segregation (DS), dopant-segregated SB (DSSB), erbium silicide, ErSi 1.7, platinum silicide, PtSi, Schottky barrier (SB), Schottky-barrier (SB) MOSFET, silicon-on-insulator (SOI), thermionic emission (TE), transconductance, tunneling
KSP 제안 키워드
Carrier injection, Current flow mechanism, Dopant segregation, Erbium silicide, Field-effect transistors(FETs), Injection Efficiency, Local Maximum Point(LMP), Schottky barrier height, Schottky barriers(SBs), Silicon On Insulator(SOI), Thermionic emission