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Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor
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- Authors
- Sung-Min Yoon, Shinhyuk Yang, Min-Ki Ryu, Chun-Won Byun, Soon-Won Jung, Sang-Hee Ko Park, Chi-Sun Hwang, Kyoung-Ik Cho
- Issue Date
- 2011-07
- Citation
- IEEE Transactions on Electron Devices, v.58, no.7, pp.2135-2142
- ISSN
- 0018-9383
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- An organic/inorganic hybrid dual-gate (DG) nonvolatile memory thin-film transistor (M-TFT) was proposed as a device with high potential for implementing large-area electronics on flexible and/or transparent substrates. The active channel and bottom and top gate insulators (GIs) of the M-TFT were composed of InGaZnO, Al2O3, and poly(vinylidene fluoride- trifluoroethylene) [P(VDF-TrFE)], respectively. It was confirmed that the fabricated DG M-TFT showed excellent device characteristics, in which the obtained field-effect mobility, subthreshold swing, and on/off ratio were approximately 32.1 cm-2V-1s-1, 0.13 V/dec, and 108, respectively. It was also successfully demonstrated that the DG configuration for the proposed M-TFT could effectively work for improving the device controllability by individually controlling the bias conditions of the top gate and bottom gate (BG). The turn-on voltage could be dynamically modulated and controlled when an appropriate fixed negative voltage was applied to the BG. The required duration of the programming pulse to obtain a memory margin of more than 10 could be reduced to 100 μs. These results correspond to the first demonstration of a hybrid-type DG M-TFT using a ferroelectric copolymer GI/oxide semiconducting active channel structure and demonstrate the feasibility of a promising memory device embeddable in a large-area electronic system. © 2011 IEEE.
- KSP Keywords
- 3 V, Active channel, Bottom gate, Channel structure, Device characteristics, Electronic system, First Stokes(S1), High potential, Hybrid-type, Large-area electronics, Nonvolatile memory(NVM)