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학술지 Normally-off GaN MIS-HEMT Using a Combination of Recessed-Gate Structure and CF4 Plasma Treatment
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저자
박영락, 김정진, 장우진, 정동윤, 배성범, 문재경, 전치훈, 고상춘, 남은수
발행일
201505
출처
Physica Status Solidi (A), v.2112 no.5, pp.1170-1173
ISSN
1862-6300
출판사
Wiley-VCH Verlag GmbH
DOI
https://dx.doi.org/10.1002/pssa.201431737
협약과제
14MB1200, 스마트 데이터센터용 차세대 광-전 모듈 기술, 남은수
초록
The combination of a recessed-gate structure and CF4 plasma treatment was studied to realize a normally-off operation of a AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) for power electronics applications. We verified that fluorine ions incorporated with a strong electronegativity increase the threshold voltage (Vth). In addition, CF4 plasma treatment slightly etches the AlGaN surface as deeply as 25 횇. A fabricated device exhibits a threshold voltage of as high as 2.6 V. Using a combination of gate recess and plasma treatment processes, the device demonstrates a tremendous potential of normally-off AlGaN/GaN MIS-HEMTs for power electronics applications.
키워드
AlGaN, GaN, high electron mobility transistors, metal-insulator-semiconductor structures, plasma treatment
KSP 제안 키워드
As 2, Fluorine ions, GaN MIS-HEMT, Gate recess, High electron mobility transistor(HEMT), Metal-insulator-semiconductor(MIS), Metal-insulator-semiconductor structures, Normally-Off, Power Electronics, plasma treatment, recessed gate