ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 Al2O3 Surface Passivation and MOS-Gate Fabrication on AlGaN/GaN High-Electron-Mobility Transistors without Al2O3 Etching Process
Cited 1 time in scopus Download 5 time Share share facebook twitter linkedin kakaostory
저자
김정진, 박영락, 장현규, 나제호, 이현수, 고상춘, 정동윤, 이형석, 문재경, 임진홍, 양전욱
발행일
201503
출처
Japanese Journal of Applied Physics, v.54 no.3, pp.1-3
ISSN
0021-4922
출판사
Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
DOI
https://dx.doi.org/10.7567/JJAP.54.038003
협약과제
14MB1200, 스마트 데이터센터용 차세대 광-전 모듈 기술, 남은수
초록
Al2O3 passivation by thermal oxidation of aluminium on AlGaN/GaN high-electron-mobility transistors (HEMTs) without Al2O3 etching is proposed. The deposition of a 5-nm-thick Al film was carried out, followed by a lift-off process to remove Al from the ohmic and contact pad area. Subsequently, the Al film was annealed under O2 ambient. When the gate bias was -7 V, the gate leakage currents of a conventional nonpassivated HEMT, a surface-passivated Schottky-gate HEMT, and a surface-passivated MOS-HEMT were determined as 140, 96, and 4.1 μA/mm, respectively. The current collapse phenomenon in the Al2O3-surface-passivated devices was evidently suppressed compared with that in the nonpassivated HEMT.
KSP 제안 키워드
Al film, Etching process, Gate fabrication, Gate leakage, High electron mobility transistor(HEMT), Leakage current, MOS-HEMT, Surface passivation, Thermal oxidation, current collapse, gate bias