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학술대회 Low Power 2.5-Gb/s CMOS Burst-Mode Transimpedance Amplifier with Fast Response Time Using a Novel Peak Detection Circuit
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김영호, 김은옥, 김원종
International Conference on Electronics, Circuits and Systems (ICECS) 2015, pp.225-228
15MS1100, SW-SoC융합 창의설계 인력양성, 조한진
A 2.5 Gb/s CMOS burst-mode transimpedance amplifier (BM-TIA) with a novel peak detection circuit is designed in this paper. The proposed peak detection circuit changes quickly the gain mode of the BM-TIA and then improves the data transmission capacity of the PON system with low power consumption. In order to obtain quick response time of the BM-TIA, a RC-LPF, an amplifier followed it and a replica circuit of the amplifier are built in. This BM-TIA was fabricated in 1P6M 0.18 μm CMOS process. The designed IC exhibits a quick response of 11 nsec for a 2.5 Gb/s burst preamble input. In this condition, this chip of 4 channel consumes 195.4 mW from a 1.8 V supply. In high gain mode, the BM-TIA achieves a gain of 66 dB with 2.45 GHz bandwidth and the eye jitter (rms) of 4.243 ps.
Burst-mode, low power, NG-PON2, peak detector, peak holder, PON system, response time, transimpedance (TIA)
KSP 제안 키워드
2.45 GHz, CMOS Process, Data transmission, NG-PON2, PON system, Peak detection, Quick response, Transimpedance Amplifier(TIA), Transmission Capacity, burst mode, detection circuit