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학술지 Photoreflectance Interference in Modulation-Doped AlGaAs/GaAs Single Heterojunctions
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저자
이규석, 한원석, 김준오, 이상준, 노삼규
발행일
200711
출처
Journal of the Korean Physical Society, v.51 no.5, pp.1821-1824
ISSN
0374-4884
출판사
한국물리학회 (KPS)
DOI
https://dx.doi.org/10.3938/jkps.51.1821
협약과제
06IB1800, 고효율 대면적 Blue LED Chip개발, 이규석
초록
We report on the photoreflectance (PR) interference in an n-modulation-doped AlGaAs/GaAs single heterojunction grown on a semi-insulating GaAs substrate. An oscillatory feature is observed in the spectral region below the bandgap of GaAs and is attributed to the interference of two light beams, one reflected from the AlGaAs/GaAs interface and the other from the upper boundary of the hole-accumulating GaAs. The modulation of the refractive index of GaAs at the hole-accumulation region with the modulation light beam gives rise to the interference effect. Analyzing theoretically the observed oscillatory feature with a single homo-interface model consisting of intrinsic GaAs and hole-accumulating GaAs, we determined the thickness of the intrinsic GaAs.
키워드
AlGaAs/GaAs single heterojunction, Interference, Photoreflectance
KSP 제안 키워드
Accumulation region, GaAs substrates, Interface model, Interference effects, Modulation-doped(MD), Single heterojunction, light beam, refractive index, semi-insulating GaAs