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학술지 Time Dependent Resistance Change of Amorphous Phase in Phase-Change Nonvolatile Memories
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저자
윤성민, 최규정, 이남열, 이승윤, 박영삼, 유병곤, 박태진, 최세영
발행일
200709
출처
Integrated Ferroelectrics, v.93 no.1, pp.83-89
ISSN
1058-4587
출판사
Taylor & Francis
DOI
https://dx.doi.org/10.1080/10584580701756151
초록
For the realization of reliable nonvolatile phase-change memory operations, it is very important to understand the long-term behaviors of memory states with different resistance values. We investigated the time-dependent behaviors of RESET resistance states (RR) for the fabricated memory devices using Sn-doped GST, in which Sn amounts were varied to control the initial values of RR. It was found that the transient variations of RR showed an increasing trend with time, and that their behaviors were closely related to the microstructure of amorphous phase in the phase-change material.
키워드
Amorphous, Ge Sb Te 2 2 5, Nonvolatile memory, Phase-change, PRAM
KSP 제안 키워드
Amorphous Phase, Ge sb te 2 2 5, Initial value, Memory states, Non-Volatile Memory(NVM), Phase Change Material(PCM), Resistance change, Sn-doped, Time-dependent, memory device