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학술지 Observation of Abrupt First-order Metal-insulator Transition in Be-doped GaAs
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저자
김현탁, 윤두협, 채병규, 강광용, 임용식
발행일
200704
출처
Journal of Crystal Growth, v.301-302, pp.252-255
ISSN
0022-0248
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.jcrysgro.2006.11.199
초록
An abrupt first-order metal-insulator transition (MIT) as a current jump is observed in Be-doped GaAs by inducing holes in a very low concentration of np ≈ 5 × 1014 cm- 3 into the valence band by the electric field; this is anomalous. In a higher hole-doping concentration of np ≈ 6 × 1016 cm- 3, the abrupt MIT is not observed at room temperature, but measured at a low temperature. The upper limit of the temperature allowing the MIT is deduced from experimental data to be approximately 440 K. The abrupt MIT is intrinsic and is compared with "breakdown" (an unsolved problem) produced by a high electric field in semiconductor devices. © 2006 Elsevier B.V. All rights reserved.
키워드
A1. Avalanche breakdown, A1. First-order metal-insulator transition, A1. Molecular beam epitaxy, B1. GaAs, B3. Devices
KSP 제안 키워드
Avalanche breakdown, Doping concentration, Experimental Data, High electric field, Low concentration, Low temperature(LT), Molecular beam epitaxy(MBE), Room-temperature, Upper limit, first-order, hole doping