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학술지 저유전 물질로의 응용을 위한 규칙성 메조포러스 실리카 박막에의 HMDS 처리
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저자
하태정, 최선규, 유병곤, 박병호
발행일
200801
출처
한국세라믹학회지, v.45 no.1, pp.48-53
ISSN
1229-7801
출판사
한국세라믹학회
DOI
https://dx.doi.org/10.4191/KCERS.2008.45.1.048
협약과제
08MB1900, 유비쿼터스용 CMOS 기반 MEMS 복합센서기술개발, 최창억
초록
In order to reduce signal delay in ULSI, an intermetal material of low dielectric constant is required. Ordered mesoporous silica film is proper to intermetal dielectric due to its low dielectric constant and superior mechanical properties. The ordered mesoporous silica film prepared by TEOS (tetraethoxysilane) / MTES (methyltriethoxysilane) mixed silica precursor and Brij-76 surfactant was surface-modified by HMDS (hexamethyldisilazane) treatment to reduce its dielectric constant. HMDS can substitute -Si(CH3) 3 groups for OH groups on the surface of silica wall. In order to modify interior silica wall, HMDS was treated by two different processes except the conventional spin coating. One process is that film is dipped and stirred in HMDS/n-hexane solution, and the other process is that film is exposed to evaporated HMDS. Through the investigation with different HMDS treatment, it was concluded that surface modification in evaporated HMDS was more effective to modify interior silica wall of nano-sized pores.
키워드
Brij-76, HMDS, Low-k, Ordered mesoporous silica film
KSP 제안 키워드
Brij-76, Hexane solution, Intermetal dielectric(IMD), Low dielectric constant, Mechanical properties(PMCs), N-Hexane, OH groups, Ordered mesoporous silica film, Signal delay, Spin coating, Surface-modified