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학술지 Electrical Properties of Top-Gate Oxide Thin-Film Transistors with Double-Channel Layers
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저자
정우석, 정승묵, 신재헌, 황치선
발행일
201107
출처
Journal of Crystal Growth, v.326 no.1, pp.186-190
ISSN
0022-0248
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.jcrysgro.2011.01.094
협약과제
10MB6800, 디스플레이용 산화물 반도체 조성 및 고밀도 산화물 반도체 타켓 개발, 정우석
초록
Using ZnO, and three compositional In2O3-Ga 2O3-ZnO (IGZO, In:Ga:Zn=1:1:1, 2:1:2, 2:2:1, atomic ratio) semiconductors, we have made and evaluated several double layered oxide thin-film transistors (TFTs). The drain current was mainly affected by the nearer channel material to a gate insulator. From the positive bias stress (PBS) tests, however, the electrical stability showed a complicated result, depending on both channel structures and post-heat treatments. © 2011 Elsevier B.V. All rights reserved.
키워드
A1. ZnO, A3. thin-film transistor, B1. electrical stability, B1. IGZO, B2. double channel layers, B2. oxide semiconductor
KSP 제안 키워드
Atomic ratio, Bias stress, Channel material, Channel structure, Double layered, Drain current, Electrical stability, Gate insulator, Gate oxide, Oxide semiconductor, Positive bias